2SC6126 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications DC-DC Converter Applications LCD Backlighting Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6126
2SC6126
High-Speed Switching Applications
DC-DC Converter Applications
LCD Backlighting Applications
Unit : mm
• High DC current gain: h_FE = 250 to 400 (I_C= 0.3 A)
• Low collector-emitter saturation: V_CE(sat) = 0.18 V (max)
• High-speed switching: t_f = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
120
V
Collector-emitter voltage
V_CEX
120
V
V_CEO
50
V
Emitter-base voltage
V_EBO
6
V
DC
I_C
Collector current (Note1)
Pulse
I_CP
3
A
5
Base current
I_B
1.5
A
Collector power
dissipation
DC
PC
1.0
t = 10 s
(Note2)
2.5
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Please use devices on condition that the junction temperature is below 150℃.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-07-07