2SC6042 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type

2.0
Common emitter
Ta=25℃
Pulse test
1.6
I_C – V_CE
1.2
0.8
0.4
200
150
100
80
60
40
20
IB = 10 mA
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector−emitter voltage V_CE (V)
2SC6042
I_C – V_CE
2.0
200
150
1.6
100
80
60
1.2
40
20
0.8
IB = 10 mA
0.4
Common emitter
Ta=25℃
Pulse test
0
0
2
4
6
8
10
12
Collector−emitter voltage V_CE (V)
1000
100
h_FE – I_C
Ta = 100°C
25
−55
10
Common emitter
VCE = 5 V
Pulse test
1
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{CE (sat)} – I_C
10
Common emitter
β= 8
Pulse test
1
25
0.1
−55
Ta = 100°C
0.01
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
IC/IB = 8
Pulse test
1
Ta = −55°C
100
25
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
2.0
Common emitter
VCE = 5 V
Pulse test
1.6
I_C – V_BE
1.2
0.8
0.4
Ta = 100°C 25
−55
0
0
0.4
0.8
1.2
1.6
Base−emitter voltage V_BE (V)
3
2006-11-13