2SC6042 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type

2SC6042
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CBO}
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
h_{FE (3)}
V_{CE (sat)}
V_{BE (sat)}
V_CB = 800 V, I_E = 0
V_EB = 8 V, I_C = 0
I_C = 1 mA, I_B = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 1 mA
V_CE = 5 V, I_C = 0.1 A
V_CE = 5 V, I_C = 0.2 A
I_C = 0.8 A, I_B = 0.1 A
I_C = 0.8 A, I_B = 0.1 A
20 μs
t_r
V_CC ≈ 200 V
I_C
I_B1
I_B2
OUT-
t_stg
I_B21
PUT
INPUT
I_B1 = 20 mA, −I_B2 = 50 mA
t_f
DUTY CYCLE ≤ 1%
Min Typ. Max Unit
―
―
100
μA
―
―
100
μA
800 ―
―
V
375 ―
―
V
80
―
―
100
―
200
80
―
―
―
―
1.0
V
―
―
1.3
V
―
―
0.5
―
―
4.5
μs
―
―
0.2
Marking
C6042
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-13