2SC6026MFV-GR Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – General-Purpose Amplifier Applications

2SC6026MFV
120
2.0 1.5
100
IC - VCE
1.0
0.7
80
0.5
60
0.3
40
20
0
0
0.2
IB = 0.1 mA
COMMON EMITTER　Ta = 25°C
1234567
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
1
COMMON EMITTER
IC/IB = 10
Ta = 100°C
0.1
25
-25
0.01
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1000
1000
IB - VBE
100
Ta = 100°C
10
25
-25
1
0.1
0
COMMON EMITTER
VCE = 6V
0.2 0.4 0.6 0.8 1 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
1000
hFE - IC
Ta = 100°C 25
100
-25
10
0.1
COMMON EMITTER
　　　VCE = 6 V
　　　VCE = 1 V
1
10
100
1000
COLLECTOR CURRENT IC (mA)
VBE(sat) - IC
10
COMMON EMITTER
IC/ IB = 10
25
1
-25
Ta = 100°C
0.1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1000
PC - Ta
250
Mounted on FR4 board
200
(₍2₂4₅._.5_4mm_mm _××₂2₅4_.4.5_mm_mm_××₁1_.6.6_mm_mm_t)t)
150
100
50
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta (°C)
3
2010-05-19