2SC6026MFV-GR Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – General-Purpose Amplifier Applications

2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
• High voltage and high current
: V_CEO = 50 V, I_C = 150 mA (max)
• Excellent h_FE linearity :
h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA) = 0.95 (typ.)
• High h_FE
: ^hFE ^{= 120 to 400}
• Complementary to 2SA2154MFV
Absolute Maximum Ratings (Ta = 25°C)
1.2 ± 0.05
0.80 ± 0.05
Unit: mm
1
1
3
2
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
V_CEO
V_EBO
I_C
I_B
50
V
5
V
150
mA
30
mA
VESM
1.BASE
2.EMITTER
3.COLLECTOR
Collector power dissipation
P_C
150*
mW
JEDEC
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
TOSHIBA
―
2-1L1A
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change
Weight: 1.5 mg (typ.)
in temperature, etc.) may cause this product to decrease in
the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
Mount Pad Dimensions (Reference)
0.5
0.45
1.15
0.4
0.45
0.4 0.4
Unit: mm
1
2010-05-19