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2SC5714_06 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type | |||
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IC â VCE
6
Common emitter
Ta = 25°C
Single nonrepetitive pulse
5
60
50
40
30
4
20
3
10
2
5
1
IB = 2 mA
0
0
0.1
0.2
0.3
0.4
0.5
Collector-emitter voltage VCE (V)
VCE (sat) â IC
1
Common emitter
IC/IB = 50
Single nonrepetitive pulse
0.1
Ta = 100°C
â55°C
25°C
0.01
0.001
0.001
0.01
0.1
1
10
Collector current IC (A)
2SC5714
1000
25
â55
hFE â IC
Ta = 100°C
100
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
10
0.001
0.01
0.1
1
10
Collector current IC (A)
VBE (sat) â IC
10
Common emitter
IC/IB = 50
Single nonrepetitive pulse
1
â55
Ta = 100°C
25
0.1
0.001
0.01
0.1
1
10
Collector current IC (A)
IC â VBE
6 Common emitter
VCE = 2 V
Single nonrepetitive pulse
5
Ta = 100°C 25 â55
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
Base-emitter voltage VBE (V)
3
2006-11-10
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