2SC5714_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = 40 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 0.5 A
V_CE = 2 V, I_C = 1.6 A
I_C = 1.6 A, I_B = 32 mA
I_C = 1.6 A, I_B = 32 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
See Figure 1 circuit diagram.
V_CC ∼− 12 V, R_L = 7.5 Ω
I_B1 = −I_B2 = 53.3 mA
2SC5714
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯
100
nA
20
⎯
⎯
V
400 ⎯ 1000
200 ⎯
⎯
⎯
⎯
0.15
V
⎯
⎯
1.10
V
⎯
18
⎯
pF
⎯
100
⎯
⎯
350
⎯
ns
⎯
90
⎯
20 μs
I_B1
I_B1
Input
I_B2
I_B2
Duty cycle < 1%
V_CC
Output
Marking
2E
Lot No.
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Figure 1 Switching Time Test Circuit &
Timing Chart
2
2006-11-10