2SC5368_06 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type

I_C – V_CE
2
0.3 _{Common emitter}
0.25 _{Tc = 25°C}
1.6
0.2
0.15
1.2
0.1
0.05
0.8
0.04
0.03
0.02
0.4
IB = 0.01 A
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
2SC5368
I_C – V_BE
4
Common emitter
VCE = 5 V
3
2
1
Tc = 100°C
25
−55
0
0
0.5
1
1.5
Base-emitter voltage V_BE (V)
h_FE – I_C
100
Tc = 100°C
50
30
25
−55
10
5
3
Common emitter
VCE = 5 V
1
0.01
0.03 0.05 0.1
0.3 0.5 1
3
Collector current I_C (A)
V_{CE (sat)} – I_C
20
Common emitter
10 _{IC/IB = 8}
5
3
−55
1
0.5
25
0.3
Tc = 100°C
0.1
0.05
0.01 0.03
0.1
0.3
1
3
10
Collector current I_C (A)
V_{BE (sat)} – I_C
0.3
Common emitter
IC/IB = 8
−55
1
Tc = 100°C
0.5
25
0.3
0.1
0.03 0.05
0.1
0.3 0.5
1
2
Collector current I_C (A)
Safe Operating Area
10
IC max (pulsed)*
3 _{IC max (continuous)}
1
DC operation
Tc = 25°C
0.3
1 ms*
10 ms*
100 ms*
0.1
0.03 *: Single nonrepetitive pulse
Tc = 25°C
0.01
Curves must be derated
linearly with increase in
temperature.
0.03
0.1 0.3 1
3 10
VCEO max
30 100 300 1000
Collector-emitter voltage V_CE (V)
3
2006-11-10