2SC5368_06 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type

Electrical Characteristics (Tc = 25°C)
2SC5368
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CBO}
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
V_CB = 520 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 1 mA, I_E = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 1 mA
V_CE = 5 V, I_C = 0.2 A
I_C = 0.8 A, I_B = 0.1 A
I_C = 0.8 A, I_B = 0.1 A
Min Typ. Max Unit
―
―
20
μA
―
―
10
μA
650 ―
―
V
450 ―
―
V
13
―
―
20
―
65
―
―
1.0
V
―
―
1.3
V
Rise time
Switching time Storage time
t_r
V_CC ≈ 200 V
―
―
0.5
20 μs
I_C
I_B1
t_stg
OUTPUT ―
―
2.0
μs
INPUT I_B2
Fall time
t_f
I_B1 = 0.1 A, I_B2 = −0.2 A,
Duty cycle ≤ 1%
―
―
0.3
Marking
Lot No.
C5368
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
2
2006-11-10