2SC5242_06 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type Power Amplifier Applications

I_C – V_CE
20
Common emitter
Tc = 25°C
16
800
600
400
300
12
250
200
150
8
100
IB = 10 mA ₅₀
4
40
30
20
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
2SC5242
I_C – V_BE
20
Common emitter
VCE = 5 V
16
12
Tc = 100°C
8
4
25
−25
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage V_BE (V)
V_{CE (sat)} – I_C
3
1
0.3
0.1 _−25
0.03
0.01
0.01
Tc = 100°C
25
Common emitter
IC/IB = 10
0.1
1
10
100
Collector current I_C (A)
Safe Operating Area
50
IC max (pulsed)*
30
1 ms*
IC max (continuous)
10 ms*
10
DC operation
Tc = 25°C
5
3
100 ms*
1
0.5
0.3
*: Single nonrepetitive pulse
0.1
Tc = 25°C
Curves must be derated
0.05 ^{linearly with increase in}
temperature.
0.03
3
10
30
100
VCEO max
300
1000
Collector-emitter voltage V_CE (V)
h_FE – I_C
300
Tc = 100°C
100
25
30
−25
10
3 Common emitter
VCE = 5 V
1
0.01
0.1
1
10
100
Collector current I_C (A)
3
2006-11-10