2SC5242_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5242
Power Amplifier Applications
2SC5242
Unit: mm
• High Collector breakdown voltage: V_CEO = 230 V (min)
• Complementary to 2SA1962
• Suitable fro use in 80-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
V_CBO
230
V
V_CEO
230
V
V_EBO
5
V
I_C
15
A
I_B
1.5
A
P_C
130
W
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16C1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 4.7 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10