2SC2705_06 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

I_C – V_CE
56
0.5
Common emitter
48
0.4 Ta = 25°C
40
0.3
32
0.2
24
16
IB = 0.1 mA
8
0
0
0
2
4
6
8 10 12 14 16
Collector-emitter voltage V_CE (V)
1000
500
300
100
50
30
10
0.3
h_FE – I_C
Common emitter
VCE = 5 V
Ta = 100°C
25
−25
1
3
10
Collector current I_C (mA)
30 50
2SC2705
I_C – V_BE
Common emitter
48
VCE = 5 V
32
Ta = 100°C 25 −25
16
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
V_{CE (sat)} – I_C
1
Common emitter
0.5
IC/IB = 10
0.3
0.1
Ta = 100°C
0.05
−25
25
0.03
0.01
0.3
1
3
10
Collector current I_C (mA)
30 50
1000
Common emitter
500 Ta = 25°C
300
100
50
30
f_T – I_C
VCE = 10 V
5
10
0.5 1
3
10
30
100
Collector current I_C (mA)
C_ob – V_CB
30
IE = 0
f = 1 MHz
Ta = 25°C
10
5
3
1
0.5
0.3
0.5 1
3
10
30
100
Collector-base voltage V_CB (V)
3
2006-11-09