2SC2705_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 150 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 1 mA, I_B = 0
h_FE
V_CE = 5 V, I_C = 10 mA
(Note)
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
I_C = 10 mA, I_B = 1 mA
V_CE = 5 V, I_C = 10 mA
V_CE = 5 V, I_C = 10 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_FE classification O: 80 to 160, Y: 120 to 240
Marking
C2705
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC2705
Min Typ. Max Unit
―
―
0.1
μA
―
―
0.1
μA
150 ―
―
V
80
―
240
―
―
1.0
V
―
―
0.8
V
― 200 ― MHz
―
1.8
―
pF
2
2006-11-09