2SC2500_06 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

5
50 40
4
30
I_C – V_CE
Common emitter
Ta = 25°C
20
3
2
10
IB = 5 mA
1
0
0
0
1
2
3
4
5
6
7
Collector-emitter voltage V_CE (V)
h_FE – I_C
500
Ta = 100°C
300
25
−25
100
50
20
0.05 0.1
0.3
Common emitter
VCE = 1 V
1
3
Collector current I_C (A)
2SC2500
I_C – V_BE
5
Common emitter
VCE = 1 V
4
3
Ta = 100°C ₂₅
−25
2
1
0
0
0.2 0.4 0.6 0.8 1.0 1.2
1.4
Base-emitter voltage V_BE (V)
V_{CE (sat)} – I_C
0.5 Common emitter
IC/IB = 40
0.3
Ta = 100°C
25
−25
0.1
0.05
0.02
0.5
0.1
0.3
1
Collector current I_C (A)
35
1000
800
600
P_C – Ta
400
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe Operating Area
5 _{IC max (pulsed)**}
3
IC max (continuous)
100 ms*
10 ms*
1
DC operation
(Ta = 25°C)
0.5
0.3 ^{*: Single nonrepetitive}
pulse Ta = 25°C
**: Pulse width ≤ 10 ms
Duty cycle ≤ 30%
Ta = 25°C
0.1 Curves must be derated
linearly with increase in
temperature.
0.05
0.3
1
3
10
Collector-emitter voltage V_CE (V)
3
2006-11-09