2SC2500_06 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

2SC2500
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 30 V, I_E = 0
I_EBO
V_EB = 6 V, I_C = 0
V_CEO
I_C = 10 mA, I_B = 0
V_EBO
I_C = 1 mA, I_C = 0
h_{FE (1)}
V_CE = 1 V, I_C = 0.5 A
(Note 3)
h_{FE (2)}
V_{CE (sat)}
V_BE
V_CE = 1 V, I_C = 2 A
I_C = 2 A, I_B = 50 mA
V_CE = 1 V, I_C = 2 A
f_T
V_CE = 1 V, I_C = 0.5 A
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
―
―
100
nA
―
―
100
nA
10
―
―
V
6
―
―
V
140
―
600
70 200 ―
―
0.2
0.5
V
― 0.86 1.5
V
― 150 ― MHz
―
27
―
pF
Note 3: h_{FE (1)} classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
Marking
C2500
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09