2SC2235_06 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

1000
800
600
400
200
0
0
I_C – V_CE
15
10
Common emitter
Ta = 25°C
7
5
4
3
2
IB = 1 mA
0
2
4
6
8
10
12
14
Collector-emitter voltage V_CE (V)
2SC2235
1000
500
300
100
50
30
10
3
h_FE – I_C
Common emitter
VCE = 5 V
Ta = 100°C
25
−25
10
30
100
300
Collector current I_C (mA)
1000
V_{CE (sat)} – I_C
0.5
Common emitter
0.3
IC/IB = 10
0.1
0.05
0.03
Ta = 100°C
25
−25
0.01
3
10
30
100
300
Collector current I_C (mA)
1000
Safe Operating Area
3000
IC max (pulsed)*
1000 IC max (continuous)
1 ms*
500
300
DC
operation
100
100 ms*
10 ms*
50
30
*: Single nonrepetitive
10
pulse Ta = 25°C
5 _{Curves must be derated}
3 _{linearly with increase in}
temperature.
1
0.5 1
3 5 10
30 50 100
300 500 1000
Collector-emitter voltage V_CE (V)
I_C – V_BE
800
Common emitter
VCE = 5 V
600
400
Ta = 100°C 25
−25
200
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage V_BE (V)
P_C – Ta
1000
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
2006-11-09