2SC2235_06 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 120 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
V _{(BR) EBO} I_E = 1 mA, I_C = 0
h_FE
V_CE = 5 V, I_C = 100 mA
(Note)
V_{CE (sat)}
V_BE
f_T
I_C = 500 mA, I_B = 50 mA
V_CE = 5 V, I_C = 500 mA
V_CE = 5 V, I_C = 100 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_FE classification O: 80 to 160, Y: 120 to 240
Marking
C2235
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC2235
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
120 ―
―
V
5
―
―
V
80
―
240
―
―
1.0
V
―
―
1.0
V
― 120 ― MHz
―
―
30
pF
2
2006-11-09