2SA1962_07 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Power Amplifier Applications

I_C – V_CE
−20
Common emitter
Tc = 25°C
−16
−800
−600
−400
−12
−250
−200
−150
−8
−100
IB = −10 mA _−50
−40
−4
−30
−20
0
0
−2
−4
−6
−8
−10
Collector-emitter voltage V_CE (V)
−3
−1
−0.3
−0.1
−0.03
−0.01
−0.01
V_{CE (sat)} – I_C
Tc = 100°C
−25
25
Common emitter
IC/IB = 10
−0.1
−1
−10
−100
Collector current I_C (A)
2SA1962
I_C – V_BE
−20
Common emitter
VCE = −5 V
−16
−12
−8
25
−4
Tc = 100°C
−25
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage V_BE (V)
h_FE – I_C
300
Tc = 100°C
100
25
30
−25
10
3 Common emitter
VCE = −5 V
1
−0.01
−0.1
−1
−10
Collector current I_C (A)
−100
Safe Operating Area
−50
−30 ^{IC max (pulsed)*}
IC max (continuous)
1 ms*
10 ms*
−10
100 ms*
−5
−3
DC operation
Tc = 25°C
−1
−0.5
−0.3
*: Single nonrepetitive pulse
Tc = 25°C
−0.1 Curves must be derated
linearly with increase in
−0.05 _temperature.
−0.03
−2
−10
−30
−100
VCEO max
−300 −1000
Collector-emitter voltage V_CE (V)
3
2006-11-09