2SA1962_07 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Power Amplifier Applications

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = −230 V, I_E = 0
I_EBO
V_EB = −5 V, I_C = 0
V _{(BR) CEO} I_C = −50 mA, I_B = 0
h_{FE (1)}
V_CE = −5 V, I_C = −1 A
(Note)
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CE = −5 V, I_C = −7 A
I_C = −8 A, I_B = −0.8 A
V_CE = −5 V, I_C = −7 A
V_CE = −5 V, I_C = −1 A
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification R: 55 to 110, O: 80 to 160
Marking
2SA1962
Min Typ. Max Unit
―
― −5.0 μA
―
― −5.0 μA
−230 ―
―
V
55
―
160
35
60
―
― −1.5 −3.0
V
― −1.0 −1.5
V
―
30
― MHz
― 360 ―
pF
TOSHIBA
A1962
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09