2SA1429_10 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

−2.0
−30
−20
−1.6
−1.2
−0.8
I_C – V_CE
−15
−10
IB = −5 mA
−0.4
0
0
−2
−4
Common emitter
0 ^{Ta = 25°C}
−6
−8
−10 −12
Collector-emitter voltage V_CE (V)
V_CE – I_C
−1.0
Common emitter
Ta = 100°C
−0.8
IB = −5 mA −10 −20
−30 −50 −70
−0.6
−100
−0.4
−0.2
0
0
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
Collector current I_C (A)
2SA1429
V_CE – I_C
−1.0
Common emitter
Ta = 25°C
−0.8
IB = −5 mA −10 −20 −30 −50 −70
−0.6
−100
−0.4
−0.2
0
0
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
Collector current I_C (A)
−1.0
−0.8 ^{IB = −5 mA}
−10
V_CE – I_C
−15
−20 −30 −40
Common emitter
Ta = −55°C
−50 −70
−0.6
−100
−0.4
−0.2
0
0
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
Collector current I_C (A)
500
300
Ta = 100°C
25
100
−55
50
30
h_FE – I_C
Common emitter
VCE = −2 V
10
−0.01
−0.03
−0.1
−0.3
−1
Collector current I_C (A)
V_{CE (sat)} – I_C
−0.5
−0.3
Common emitter
IC/IB = 20
−0.1
−0.05
−0.03
Ta = 100°C
25
−55
−0.01
−0.01
−0.03
−0.1
−0.3
−1
Collector current I_C (A)
3
2010-03-09