|
2SA1429_10 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications | |||
|
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1429
Power Amplifier Applications
Power Switching Applications
2SA1429
Unit: mm
⢠Low collector saturation voltage: VCE (sat) = â0.5 V (max) (IC = â1 A)
⢠High-speed switching: tstg = 1.0 μs (typ.)
⢠Complementary to 2SC3669.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
â80
V
â80
V
â5
V
â2
A
â1
A
1000
mW
150
°C
â55 to 150
°C
JEDEC
JEITA
TOSHIBA
â
â
2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.2 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-09
|
▷ |