2SA1160_09 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Strobe Flash Applications Medium Power Amplifier Applications

I_C – V_CE
−4
−50
−30
Common emitter
Ta = 25°C
−20
−3
−100
−10
−2
−5
−3
−1
−2
0 IB = −1 mA
0
0
−0.8
−1.6
−2.4
−3.2
−4.0
Collector-emitter voltage V_CE (V)
2SA1160
I_C – V_BE
−4
Common emitter
VCE = −1 V
−3
−2
Ta = 100°C
−25
−1
25
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage V_BE (V)
3000
1000
300
Ta = 100°C
25
−25
100
h_FE – I_C
Common emitter
VCE = −1 V
30
−0.01
−0.03
−0.1
−0.3
−1
Collector current I_C (A)
−3 −5
Safe Operating Area
−10
−5 IC max (pulsed)*
−3
IC max (continuous)
10 ms**
100 ms*
−1
DC operation
Ta = 25°C
−0.5
−0.3 *: Single nonrepetitive
pulse Ta = 25°C
**: Pulse width ≤ 10 ms(max)
Duty cycle ≤ 30%
Ta = 25°C
−0.1 _{Curves must be derated}
linearly with increase in
temperature.
−0.05
VCEO max
−0.1
−0. 3
−1
−3
−10
−30
Collector-emitter voltage V_CE (V)
−1
Common emitter
−0.5 IC/IB = 40
−0.3
V_{CE (sat)} – I_C
−0.1
−0.05
−0.03
−0.01
−0.01
Ta = 100°C
25
−25
−0.03
−0.1
−0.3
−1
Collector current I_C (A)
−3 −5
P_C – Ta
1.6
1.2
0.8
0.4
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
3
2009-12-21