2SA1160_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Strobe Flash Applications Medium Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
2SA1160
Unit: mm
• High DC current gain and excellent h_FE linearity
: h_{FE (1)} = 140 to 600 (V_CE = −1 V, I_C = −0.5 A)
: h_{FE (2)} = 60 (min), 120 (typ.) (V_CE = −1 V, I_C = −4 A)
• Low saturation voltage
: V_{CE (sat)} = −0.5 V (max) (I_C = −2 A, I_B = −50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
−20
V
−10
V
−6
V
−2
A
−4
−2
A
900
mW
150
°C
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21