TPC8210 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

Thermal Characteristics
Characteristics
Symbol
Max
Single-device operation
Thermal resistance, channel to ambient
(Note 3a)
(t = 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R_{th (ch-a) (1)}
R_{th (ch-a) (2)}
Single-device operation
Thermal resistance, channel to ambient
(Note 3a)
(t = 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R_{th (ch-a) (1)}
R_{th (ch-a) (2)}
83.3
114
167
278
Unit
°C/W
Marking (Note 6)
TPC8210
TPC8210
※
Type
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
(a)
a) Device mounted on a glass-epoxy board (a)
(b)
b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: V_DD = 24 V, T_ch = 25°C (initial), L = 1.0 mH, R_G = 25 Ω, I_AR = 8 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: · on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
2
2003-02-18