TPC8210 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPC8210
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
TPC8210
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
l Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.)
l High forward transfer admittance: |Yfs| = 13 S (typ.)
l Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
l Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-device
operation
(Note 3a)
Single-device value
at dual operation
(Note 3b)
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-device
operation
(Note 3a)
Single-device value
at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_D(2)
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
8
A
32
1.5
W
1.1
0.75
W
0.45
83.2
mJ
8
A
0.1
mJ
150
°C
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.08 g (typ.)
Circuit Configuration
8765
1234
1
2003-02-18