TPC6108 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4)

Electrical Characteristics (Ta = 25°C)
TPC6108
TENTATIVE
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±16 V, V_DS = 0 V


±10
µA
I_DSS
V_DS = −30 V, V_GS = 0 V


−10
µA
V _{(BR) DSS}
V _{(BR) DSX}
I_D = −10 mA, V_GS = 0 V
I_D = −10 mA, V_GS = 20 V
−30


V
−15


V_th
V_DS = −10 V, I_D = − 1 mA
−0.8

−2.0
V
R_{DS (ON)}
R_{DS (ON)}
V_GS = −4.5 V, I_D = −2.2 A
V_GS = −10 V, I_D = −2.2 A

75 100
mΩ

50
60
|Y_fs|
V_DS = −10 V, I_D = −2.2 A
3.7
7.4

S
C_iss

570

C_rss
V_DS = −10 V, V_GS = 0 V, f = 1 MHz 
75

pF
C_oss

85

t_r
V_GS ^{0 V}
−10 V
t_on
I_D = −2.2 A

3.5

V_OUT

12

ns
t_f

21

V_DD ∼− −15 V
t_off
Duty ^<= 1%, t_w = 10 µs

70

Q_g
Q_gs1
Q_gd
V_DD ∼− −24 V, V_GS = −10 V,
I_D = −4.5 A

13


1.8

nC

2.5

Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Pulse (Note 1)
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition

I_DR = −4.5 A, V_GS = 0 V
Min Typ. Max Unit


−18
A


1.2
V
2
2004-10-28