TPC6108 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4)

TPC6108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSᶚ)
TPC6108
Notebook PC Applications
Portable Equipment Applications
TENTATIVE
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Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7.4 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement-model: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation(t = 5 s) (Note 2a)
Drain power dissipation(t = 5 s) (Note 2b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
−30
V
−30
V
±20
V
−4.5
A
−18
2.2
W
0.7
1.3
mJ
−2.25
A
0.22
mJ
150
°C
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient(t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
56.8 °C/W
178.5 °C/W
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer
to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Drain
Drain
Gate
Source
Drain
Drain
JEDEC
ʕ
JEITA
ʕ
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
654
123
1
2004-10-28