TLP168J_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Photocoupler GaAℓAs IRed & Photo-Triac

Recommended Operating Conditions
TLP168J
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
Forward current
Peak on−state current
Operating temperature
V_AC
―
―
240 V_ac
I_F
4.5
6
7.5 mA
I_TP
―
―
1
A
T_opr
−10
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Holding current
Critical rate of rise of off−
state voltage
Critical rate of rise of
commutating voltage
Symbol
Test Condition
V_F
I_R
C_T
I_DRM
V_TM
I_H
I_F=10mA
V_R=3V
V=0, f=1MHz
V_DRM=600V
I_TM=70mA
―
dv / dt V_in=240Vrms, Ta=85°C
dv / dt(c)
V_in=60Vrms
I_T=15mArms
Min. Typ. Max. Unit
1.2 1.4 1.7
V
―
―
10
μA
―
30
―
pF
―
10 1000 nA
―
1.7 2.8
V
―
0.6
―
mA
200 500
― V / μs
―
0.2
― V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
I_FT
V_IH
I_IH
C_s
R_S
BV_S
Test Condition
V_T=6V
I_F=Rated I_FT
I_F=Rated I_FT
V_T= Rated V_DRM
V_S=0, f=1MHz
V_S=500V, R.H. ≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min. Typ. Max. Unit
―
―
3
mA
―
―
50
V
―
200 600 μA
―
0.8
―
pF
5×10¹⁰ 10¹⁴
―
Ω
2500
―
―
Vrms
―
5000 ―
―
5000 ―
Vdc
2
2007-10-01