TLN238 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Infrared LED for Space-Optical-Transmission

TLN238(F)
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ.
Forward voltage
Reverse current
Radiant intensity
Cut-off frequency
Peak emission wavelength
Half-angle value
V_F
I_F = 100 mA
⎯
1.6
I_R
V_R = 4 V
⎯
⎯
I_E
I_F = 50 mA
40
70
f_c
I_F = 50 mA + 5 mA_P-P
(Note 3) ⎯
15
λ_P
I_F = 50 mA
θ¹
2
I_F = 50 mA
⎯
870
⎯
±18
Note 3: This is the frequency when modulation light power decreases by 3 dB from 1 MHz.
Max Unit
2.0
V
60
μA
⎯ mW/sr
⎯ MHz
⎯
nm
⎯
°
Handling Precautions
• Soldering must be performed under the stopper.
• When forming the leads, bend each lead at least 5 mm from the package body. Soldering must be performed
after the leads have been formed.
• The radiant intensity decreases over time due to current flowing in the infrared LED. When designing circuits,
take into account the change in radiant intensity over time.
2
2007-10-01