TLN238 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Infrared LED for Space-Optical-Transmission

TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN238(F)
Lead(Pb)-Free
Space-Optical-Transmission
Opto-Electronic Switches
Printers, Fax Machines
Home Electric Equipment
TLN238(F)
Unit: mm
• High radiant intensity: 70 mW/sr (typ.) at I_F = 50 mA
• Half-angle value: θ1/2 = ±18° (typ.)
• High-speed data transmission purposes
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
I_F
100
mA
Pulse forward current
I_FP
1000
(Note 1)
mA
* Includes resin-mold portion
( ) : Reference Value
Power dissipation
Reverse voltage
P_D
200
mW
V_R
4
V
TOSHIBA
4-3EA1
Operating temperature range
T_opr
−25~85
°C
Weight: 0.14 g (typ.)
Storage temperature range
T_stg
Soldering temperature (5 s), (Note 2)
T_sol
−30~100
°C
260
°C
Note: Using continuously under heavy loads (e.g. the application of high
Pin Connection
1. Anode
1
2 _{2. Cathode}
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: f = 100 kHz, duty = 1%
Note 2: Soldering must be performed 2 mm from the bottom of the package body.
1
2007-10-01