TIM8996-30 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM8996-30
ABSOLUTE MAXIMUM RATINGS ( Ta= 25_°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 _°C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°^C
°^C
PACKAGE OUTLINE (7-AA03A)
RATING
15
-5
20
136
175
-65 to +175
Unit in mm
Unit in mm
cc
Gate
Gate
dd
ee
Source
Source
Drain
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2