TIM8996-30 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM8996-30
FEATURES
„ HIGH POWER
P1dB=45.0dBm at 8.9GHz to 9.6GHz
„ HIGH GAIN
G1dB=7.0dB at 8.9GHz to 9.6GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
P1dB
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
G1dB
IDS1
VDS= 10V
IDSset≅7.0A
f = 8.9 to 9.6GHz
Power Added Efficiency
ηadd
Channel Temperature Rise
ΔTch
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 10 Ω(MAX.)
dBm
dB
A
%
°^C
44.0 45.0 ⎯
6.0 7.0 ⎯
⎯ 10.0 11.5
⎯ 25 ⎯
⎯ ⎯ 100
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITIONS
gm VDS= 3V
IDS= 9.6A
VGSoff VDS= 3V
IDS= 290mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -290μA
Rth(c-c) Channel to Case
UNIT
S
V
A
V
°^C/W
MIN.
⎯
-0.7
⎯
-5
⎯
TYP. MAX.
5.5 ⎯
-2.0 -4.5
20.0 ⎯
⎯⎯
1.0 1.1
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. July 2009