TIM5359-8SL Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM5359-8SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25° C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-11D1B)
RATING
15
-5
7.0
37.5
175
-65 to +175
4-C1.2
‚
0.6± 0.15
•
‚
Unit in mm
• Gate
‚ Source
ƒ Drain
ƒ
17± 0.3
21± 0.2
11.0 MAX.
12
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2