TIM5359-8SL Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM5359-8SL
PRELIMINARY
FEATURES
n HIGH POWERT
P1dB=39.5dBm at 5.3GHz to 5.9GHz
n HIGH GAIN
G1dB=9.0dB at 5.3GHz to 5.9GHz
n BROAD BAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL
CONDITION
Output Power at 1dB
P1dB
Compression Point
Power Gain at 1dB
Compression Point
G1dB
VDS= 10V
f= 5.3 to 5.9GHz
Drain Current
IDS1
Gain Flatness
Power Added Efficiency
3^rd Order Intermodulation
∆G
ηadd
IM3
Distortion
NOTE
Drain Current
IDS2
Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c)
NOTE : Two Tone Test, Po=28.5dBm (Single Carrier Level)
UNIT
dBm
dB
A
dB
%
dBc
A
°C
MIN. TYP. MAX.
38.5 39.5 
8.0 9.0 
 2.2 2.6
  ±0.6
 35 
-42 -45 
 2.2 2.6
  80
ELECTRICAL CHARACTERISTICS ( Ta= 25° C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
Gm
VGSoff
IDSS
VGSO
CONDITION
VDS= 3V
IDS= 3.0A
VDS= 3V
IDS= 30mA
VDS= 3V
VGS= 0V
IGS= -100µA
Rth(c-c) Channel to Case
UNIT
mS
V
A
V
°C/W
MIN. TYP. MAX.
 1800 
-1.0 -2.5 -4.0
 5.2 7.0
-5  
 2.5 3.8
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jun. 2002