TIM1414-8-252 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz

TIM1414-8-252
ABSOLUTE MAXIMUM RATINGS ( Ta= 25_°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 _°C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°^C
°^C
PACKAGE OUTLINE (2-11C1B)
RATING
15
-5
10.4
60
175
-65 to +175
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2