TIM1414-8-252 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1414-8-252
FEATURES
„ HIGH POWER
P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
„ HIGH GAIN
G1dB=5.0 dB at 13.75 GHz to 14.5 GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL CONDITIONS
Output Power at 1dB Gain P1dB
Compression Point
Power Gain at 1dB Gain
G1dB
VDS= 9V
Compression Point
f= 13.75 to 14.5GHz
Drain Current
IDS1
Power Added Efficiency
ηadd
Channel Temperature Rise
ΔTch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
UNIT
dBm
dB
A
%
°^C
MIN.
38.0
4.0
⎯
⎯
⎯
TYP. MAX.
39.0 ⎯
5.0 ⎯
3.4 4.4
18 ⎯
⎯ 80
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
VGSO
CONDITIONS
VDS= 3V
IDS= 4.0 A
VDS= 3V
IDS= 120mA
VDS= 3V
VGS= 0V
IGS= -120μA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS ⎯ 2400 ⎯
V -2.0 -3.5 -5.0
A
⎯ 8.0 10.4
V
-5 ⎯ ⎯
°^C/W ⎯ 1.6 2.5
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006