TIM1213-5 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1213-5
ABSOLUTE MAXIMUM RATINGS ( Ta= 25° C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-9D1B)
RATING
15
-5
5.7
30
175
-65 to +175
4-R2.4
•
‚
• Gate
‚ Source
‚
ƒ Drain
ƒ
0.5±0.15
13.0±0.3
17.0 MAX.
8.5 MAX.
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2