TIM1213-5 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1213-5
PRELIMINARY
FEATURES
n HIGH POWERT
P1dB=37.0dBm at 12.7GHz to 13.2GHz
n HIGH GAIN
G1dB=7.0dB at 12.7GHz to 13.2GHz
n BROAD BAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
Channel Temperature Rise
SYMBOL
P1dB
G1dB
IDS1
ηadd
∆Tch
CONDITION
VDS= 9V
f= 12.7 to 13.2GHz
VDS X IDS X Rth(c-c)
UNIT
dBm
dB
A
%
°C
MIN. TYP. MAX.
37.0 37.5 
6.0 7.0 
 2.0 2.5
 25 
  80
ELECTRICAL CHARACTERISTICS ( Ta= 25° C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
CONDITION
gm VDS= 3V
IDS= 2.4A
VGSoff VDS= 3V
IDS= 72mA
IDSS VDS= 3V
VGSO
VGS= 0V
IGS= -72µA
Rth(c-c) Channel to Case
UNIT
mS
V
A
V
°C/W
MIN. TYP. MAX.
 1400 
-2.0 -3.5 -5.0
 5.0 5.7
-5  
 3.0 3.7
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jun. 2002