SSM6N09FU Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

Marking
6
5
4
DJ
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
SSM6N09FU
Figure 1: 25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 0.32 mm² ´ 6
0.4 mm
1
2
3
1
2
3
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±16 V, V_DS = 0
¾
¾
±1
mA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
¾
¾
V
I_DSS
V_DS = 30 V, V_GS = 0
¾
¾
1
mA
V_th
V_DS = 5 V, I_D = 0.1 mA
1.1
¾
1.8
V
ïY_fsï
V_DS = 5 V, I_D = 200 mA (Note2) 270
¾
¾
mS
I_D = 200 mA, V_GS = 10 V (Note2) ¾
0.53
0.7
R_{DS (ON)} I_D = 200 mA, V_GS = 4 V (Note2) ¾
0.8
1.2
W
I_D = 200 mA, V_GS = 3.3 V (Note2) ¾
1.0
1.7
C_iss
V_DS = 5 V, V_GS = 0, f = 1 MHz
¾
20
¾
pF
C_rss
V_DS = 5 V, V_GS = 0, f = 1 MHz
¾
7
¾
pF
C_oss
V_DS = 5 V, V_GS = 0, f = 1 MHz
¾
16
¾
pF
t_on
V_DD = 5 V, I_D = 200 mA,
t_off
V_GS = 0~4 V
¾
72
¾
ns
¾
68
¾
Switching Time Test Circuit (Q1, Q2 Common)
(a) Test circuit
4V
IN
0
10 ms
V_DD = 5 V
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 W)
Common Source
Ta = 25°C
OUT
R_L
V_DD
(b) V_IN
4V
0V
(c) V_OUT
V_DD
V_{DS (ON)}
90%
10%
10%
90%
t_r
t_f
t_on
t_off
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device. VGS recommended voltage of 4 V or higher to turn on this
product.
2
2003-02-19