SSM6N09FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6N09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N09FU
High Speed Switching Applications
Unit: mm
· Small package
· Low Drain-Source ON resistance.
: Ron = 0.7 Ω (max) (@VGS = 10 V)
: Ron = 1.2 Ω (max) (@VGS = 4 V)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
400
mA
I_DP
800
Drain power dissipation (Ta = 25°C)
P_D (Note1)
300
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55~150
°C
JEDEC
―
Note1: Total rating, mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm² ´ 6) Figure 1.
JEITA
TOSHIBA
―
2-2J1C
Weight: 6.8 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-02-19