SSM6K31FE Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – High speed switching

Electrical Characteristics (Ta = 25°C)
SSM6K31FE
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Note 2:Pulse measurement
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±16 V, V_DS = 0
−
−
±1
µA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
20
−
−
V
I_DSS
V_DS = 20 V, V_GS = 0
−
−
1
µA
V_th
V_DS = 5 V, I_D = 0.1 mA
1.1
−
2.3
V
Y_fs
V_DS = 5 V, I_D = 0.6 A
(Note 2) 0.58
−
−
S
R_{DS (ON)}
I_D = 0.6 A, V_GS = 10 V
I_D = 0.6 A, V_GS = 4 V
(Note 2) −
(Note 2) −
240 320
mΩ
400 540
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
−
36
−
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
−
10
−
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
−
30
−
pF
t_on
V_DD = 10 V, I_D = 0.6 A,
t_off
V_GS = 0~4 V, R_G = 10 Ω
−
−
−
ns
−
−
−
Switching Time Test Circuit
(a) Test circuit
(b) V_IN
4V
in
0
10 µs
V_DD = 10 V
R_G = 10Ω
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
Common source
Ta = 25°C
out
V_DD
(c) V_OUT
4V
0V
V_DD
V_{DS (ON)}
10%
90%
10%
90%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = 100 µA for
this product. For normal switching operation, V_{GS (on)} requires higher voltage than V_th and V_{GS (off)} requires
lower voltage than V_th.
(Relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)})
Please take this into consideration for using the device.
V_GS recommended voltage of 4.0 V or higher to turn on this product.
2
2003-12-19