SSM6K31FE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High speed switching

Silicon P Channel MOS Type (Ђ-MOSᶝ)
SSM6K31FE
˓çHigh speed switching
˓çDC-DC Converter
• small package
• Low R_{DS (ON)}
: R_on = 240 mΩ (typ) (@V_GS = 10 V)
: R_on = 400 mΩ (typ) (@V_GS = 4 V)
SSM6K31FE
ç
Unit: mmç
Maximum Ratings (Ta = 25°C) MOSFETç
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
V_DS
20
V
V_GSS
±20
V
I_D
1.2
A
I_DP
2.4
P_D (Note 1)
500
mW
T_ch
150
°C
T_stg
−55~150
°C
Note 1:Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm²)
Marking
Circuit (top view)
Equivalent
1,2,5,6ç : Drain
3ç ç ç : Gate
4
: Source
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
654
654
Ì B
123
123
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the
environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use
containers and other objects that are made of anti-static materials.
The Channel-to-Ambient thermal resistance R_{th (ch-a)} and the drain power dissipation P_D vary according to
the board material, board area, board thickness and pad area. When using this device, please take heat
dissipation fully into account.
1
2003-12-19