SSM5N15FU Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
⎪Y_fs⎪
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = ±16 V, V_DS = 0
I_D = 0.1 mA, V_GS = 0
V_DS = 30 V, V_GS = 0
V_DS = 3 V, I_D = 0.1 mA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA, V_GS = 4 V
I_D = 10 mA, V_GS = 2.5 V
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DD = 5 V, I_D = 10 mA,
V_GS = 0~5 V
Switching Time Test Circuit
SSM5N15FU
Min Typ Max Unit
⎯
⎯
±1
μA
30
⎯
⎯
V
⎯
⎯
1
μA
0.8
⎯
1.5
V
25
⎯
⎯
mS
⎯
2.2
4.0
Ω
⎯
4.0
7.0
⎯
7.8
⎯
pF
⎯
3.6
⎯
pF
⎯
8.8
⎯
pF
⎯
50
⎯
ns
⎯
180
⎯
(a) Test circuit
5V
IN
0
10 μs
V_DD = 5 V
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common Source
Ta = 25°C
(b) V_IN
OUT
5V
0V
V_DD
(c) V_OUT
V_DD
V_{DS (ON)}
10%
90%
10%
90%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = 100 μA for this
product. For normal switching operation, V_{GS (on)} requires higher voltage than V_th and V_{GS (off)} requires lower
voltage than V_th. (Relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)} )
Please take this into consideration for using the device.
2
2007-11-01