SSM5N15FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM5N15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N15FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
• Small package
• Low ON resistance : R_on = 4.0 Ω (max) (@V_GS = 4 V)
: R_on = 7.0 Ω (max) (@V_GS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D (Note 1)
150
mW
1: Gate1
2: Source
3: Gate2
4: Drain2
5: Drain1
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
TOSHIBA
2-2L1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.006 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating,
Marking
Equivalent Circuit (top view)
5
4
5
4
DP
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01