SSM3K01T_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

Marking
3
Equivalent Circuit
3
SSM3K01T
KW
1
2
1
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±10 V, V_DS = 0
⎯
⎯
±1
μA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
⎯
⎯
V
I_DSS
V_DS = 30 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.6
⎯
1.1
V
|Y_fs|
V_DS = 3 V, I_D = 1.6 A
(Note3) 2.6 5.2
⎯
S
R_{DS (ON)} I_D = 1.6 A, V_GS = 4 V
(Note3) ⎯
85 120 mΩ
R_{DS (ON)} I_D = 1.3 A, V_GS = 2.5 V
(Note3) ⎯
115 150 mΩ
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯ 152 ⎯
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
41
⎯
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯ 102 ⎯
pF
t_on
V_DD = 15 V, I_D = 0.5 A
t_off
V_GS = 0~2.5 V, R_G = 4.7 Ω
⎯
45
⎯
nS
⎯
69
⎯
Switching Time Test Circuit
(a) Test circuit
10 μs
2.5 V
IN
0
I_D
V_DD = 15 V
OUT _{RG = 4.7 Ω}
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
COMMON SOURCE
Ta = 25°C
V_DD
(b) V_IN
V_GS
(c) V_OUT
V_DS
2.5 V
0
V_DD
V_{DS (ON)}
10%
t_r
t_on
90%
10%
90%
t_f
t_off
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = 100 μA for
this product. For normal switching operation, V_{GS (on)} requires higher voltage than V_th and V_{GS (off)} requires
lower voltage than V_th.
(relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)})
Please take this into consideration for using the device.
2
2007-11-01