SSM3K01T_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
SSM3K01T
High Speed Switching Applications
Unit: mm
• Small Package
• Low on Resistance: R_on = 120 mΩ (max) (@V_GS = 4 V)
: R_on = 150 mΩ (max) (@V_GS = 2.5 V)
• Low Gate Threshold Voltage: V_th = 0.6~1.1 V
(@V_DS = 3 V, I_D = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±10
V
DC
I_D
3.2
Drain current
Pulse
I_DP
A
6.4
(Note 2)
Drain power dissipation (Ta = 25°C)
P_D
1250
mW
(Note 1)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
JEITA
TOSHIBA
―
―
2-3S1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 10 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm², t = 10 s)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R_{th (ch-a)} and the drain power dissipation P_D vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
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2007-11-01