SM8LZ47 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Repetitive Peak Off−State
Current
Gate Trigger Voltage
Gate Trigger Current
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off-
State Voltage
Critical Rate of Rise of Off-
State Voltage at
Commutation
I_DRM
V_DRM = 800V
I
T2 (+), Gate (+)
II
V_GT
V_D = 12V
R_L = 20Ω
T2 (+), Gate (−)
III
T2 (−), Gate (−)
I
T2 (+), Gate (+)
II
I_GT
V_D = 12V
R_L = 20Ω
T2 (+), Gate (−)
III
T2 (−), Gate (−)
V_TM
V_GD
I_H
R_{th (j−c)}
dv / dt
I_TM = 12A
V_D = 800V, Tc = 125°C
V_D = 12V, I_TM = 1A
Junction to Case, AC
V_DRM = 800V, T_j = 125°C
Exponential Rise
(dv / dt) c
V_DRM = 400V, T_j = 125°C
(di / dt) c = −4.5A / ms
SM8LZ47
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
30
―
―
30
mA
―
―
30
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
3.6 °C / W
―
300
― V / µs
10
―
― V / µs
MARKING
NUMBER
SYMBOL
*1
TOSHIBA PRODUCT MARK
*2
TYPE
SM8LZ47
MARK
M8LZ47
Example
8A : January 1998
*3
8B : Febrary 1998
8L : December 1998
2
2001-07-13