SM8LZ47 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM8LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM8LZ47
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage
l R.M.S ON−State Current
l High Commutating (dv / dt)
l Isolation Voltage
MAXIMUM RATINGS
: VDRM = 800V
: IT(RMS) = 8A
: (dv / dt) c = 10V / µs (Min.)
: VISOL = 1500V AC
CHARACTERISTIC
SYMBOL
RATING
Repetitive PeakOff−State Voltage
R.M.S On−State Current
(Full Sine Waveform)
Peak One Cycle Surge On-State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
V_DRM
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_FGM
I_GM
T_j
T_stg
V_ISOL
800
8
70 (50Hz)
80 (60Hz)
24.5
50
5
0.5
10
2
−40~125
−40~125
1500
Note:
di / dt test condition
V_DRM = 400V, I_TM≤12A, t_gw≥10µs, t_gr≤250ns,
i_gp = I_GT×2.0
UNIT
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
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13−10H1A
1
2001-07-13