SM8GZ47A Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State
Current
I
II
Gate Trigger Voltage
III
IV
I
SM8GZ47
II
SM8JZ47
III
Gate Trigger
IV
Current
I
SM8GZ47A
II
SM8JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of Off−State
Voltage
SM8GZ47
SM8JZ47
SM8GZ47A
SM8JZ47A
Critical Rate of
Rise of Off−State
Voltage at
Commutation
SM8GZ47
SM8JZ47
SM8GZ47A
SM8JZ47A
SYMBOL
TEST CONDITION
I_DRM
V_GT
I_GT
V_TM
V_GD
I_H
R_{th (j−c)}
V_DRM = Rated
T2 (+), Gate (+)
V_D = 12V
R_L = 20Ω
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
V_D = 12V
R_L = 20Ω
T2 (−), Gate (+)
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
I_TM = 12A
V_D = Rated, Tc = 125°C
V_D = 12V, I_TM = 1A
Junction to Case, AC
dv / dt
V_DRM = Rated, T_j = 125°C
Exponential Rise
(dv / dt) c
V_DRM = 400V, T_j = 125°C
(di /dt) c = −4.5A / ms
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
30
―
―
30
―
―
30
―
―
―
mA
―
―
20
―
―
20
―
―
20
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
3.6 °C / W
―
300
―
V / µs
―
200
―
10
―
―
V / µs
4
―
―
MARKING
* NUMBER
*1
*2
*3
SYMBOL
TOSHIBA PRODUCT MARK
SM8GZ47, SM8GZ47A
TYPE
SM8JZ47, SM8JZ47A
SM8GZ47A, SM8JZ47A
*4
MARK
M8GZ47
M8JZ47
A
Example
8A : January 1998
8B : Febrary 1998
8L : December 1998
2
2001-07-13