SM8GZ47A Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage
l R.M.S ON−State Current
l High Commutating (dv / dt)
l Isolation Voltage
: VDRM = 400, 600V
: IT (RMS) = 8A
: VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM8GZ47
SM8GZ47A
SM8JZ47
SM8JZ47A
R.M.S On−State Current
(Full Sine Waveform Tc = 83°C)
Peak One Cycle Surge On-State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
SYMBOL
V_DRM
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
V_ISOL
RATING
400
600
8
80 (50Hz)
88 (60Hz)
32
50
5
0.5
10
2
−40~125
−40~125
1500
UNIT
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1A
Note 1: di / dt Test Condition
V_DRM = 0.5×Rated
I_TM ≤ 12A
t_gw ≥ 10µs
t_gr ≤ 250ns
i_GP = I_GT×2.0
1
2001-07-13